مؤتمر
Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis
| العنوان: | Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis |
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| المؤلفون: | Kashiwa, Keisuke, Yao, Kailun, Yano, Hiroshi, Iwamuro, Noriyuki, Harada, Shinsuke |
| المصدر: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :113-116 May, 2022 |
| Relation: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781665422017 9781665422000 |
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| تدمد: | 19460201 |
| DOI: | 10.1109/ISPSD49238.2022.9813534 |