Novel double MOS-resistors SOI-LIGBT with low forward voltage and high short-circuit capability

التفاصيل البيبلوغرافية
العنوان: Novel double MOS-resistors SOI-LIGBT with low forward voltage and high short-circuit capability
المؤلفون: Yang, Kemeng, Su, Wei, Wei, Jie, Wang, Junnan, Ma, Zhen, Li, Zhaoji, Luo, Xiaorong
المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :157-160 May, 2022
Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665422017
9781665422000
تدمد:19460201
DOI:10.1109/ISPSD49238.2022.9813603