مؤتمر
Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors
| العنوان: | Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors |
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| المؤلفون: | Lyu, Gang, Wei, Jin, Ng, Yat Hon, Cheng, Yan, Feng, Sirui, Chen, Kevin J. |
| المصدر: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :185-188 May, 2022 |
| Relation: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781665422017 9781665422000 |
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| تدمد: | 19460201 |
| DOI: | 10.1109/ISPSD49238.2022.9813683 |