300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures

التفاصيل البيبلوغرافية
العنوان:	300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures
المؤلفون:	Xu, Haiwen, Khazaka, Rami, Zhang, Jishen, Zheng, Zijie, Chen, Yue, Gong, Xiao
المصدر:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :367-368 Jun, 2022
Relation:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
قاعدة البيانات:	IEEE Xplore Digital Library