Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

التفاصيل البيبلوغرافية
العنوان:	Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
المؤلفون:	Jo, H. -B., Lee, I.-G., Baek, J. -M., Lee, S. T., Choi, S. -M., Kim, H.-J., Jeong, H. -S., Park, W.-S., Yoo, J. -H., Lee, H.-Y., Yun, D. Y., Son, SW., Ko, D.-H., Kim, T.-W., Kwon, H. -M., Kim, S.-K., Kim, J. G., Yun, J., Kim, T., Lee, J H., Lee, J.-H., Shin, C. -S., Seo, K. -S., Kim, D. -H.
المصدر:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :397-398 Jun, 2022
Relation:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
قاعدة البيانات:	IEEE Xplore Digital Library