مؤتمر
High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET
| العنوان: | High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET |
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| المؤلفون: | Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., Seiler, U., Hackbarth, Th., Raynor, B. |
| المصدر: | 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) Semiconductor device research Semiconductor Device Research Symposium, 2001 International. :482-485 2001 |
| Relation: | 2001 International Semiconductor Device Research Symposium. Symposium Proceedings |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780374320 9780780374324 |
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| DOI: | 10.1109/ISDRS.2001.984551 |