دورية أكاديمية
High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
| العنوان: | High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate |
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| المؤلفون: | Wang, H., Pu, T., Li, X., Liu, C., Wu, J., Yang, J., Zhang, Z., Lu, Y., Wang, Q., Song, L., Chiu, H., Ao, J., Liu, X. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(9):4859-4863 Sep, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2022.3193991 |