Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

التفاصيل البيبلوغرافية
العنوان: Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices
المؤلفون: Nibhanupudi, SS Teja, Veksler, Dmitry, Roy, Anupam, Coupin, Matthew, Matthews, Kevin C., Warner, Jamie, Bersuker, Gennadi, Kulkarni, Jaydeep P., Banerjee, Sanjay K.
المصدر: 2022 Device Research Conference (DRC) Device Research Conference (DRC), 2022. :1-2 Jun, 2022
Relation: 2022 Device Research Conference (DRC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665498838
تدمد:26406853
DOI:10.1109/DRC55272.2022.9855793