دورية أكاديمية
Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors
| العنوان: | Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors |
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| المؤلفون: | Kajiwara, K., Eriguchi, K., Fusegawa, K., Mitsugi, N., Samata, S., Torigoe, K., Harada, K., Hourai, M., Nishizawa, S. |
| المصدر: | IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 35(4):620-625 Nov, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 08946507 15582345 |
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| DOI: | 10.1109/TSM.2022.3199862 |