دورية أكاديمية
Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts
| العنوان: | Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts |
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| المؤلفون: | Chanuel, A., Gobil, Y., Hsu, C.L., Charles, M., Coig, M., Biscarrat, J., Aussenac, F., Defrance, N., Gaquiere, C., Gaillard, F., Morvan, E. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(10):5530-5535 Oct, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2022.3201837 |