2D simulation of the resistive state in bipolar resistive switching memories based on oxygen vacancies

التفاصيل البيبلوغرافية
العنوان: 2D simulation of the resistive state in bipolar resistive switching memories based on oxygen vacancies
المؤلفون: Rios, J. Federico Ramirez, Perez Garcia, S. A., Moreno, M. Moreno, Sanchez, A. Morales
المصدر: 2022 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2022 IEEE Latin American. :1-4 Jul, 2022
Relation: 2022 IEEE Latin American Electron Devices Conference (LAEDC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665497671
DOI:10.1109/LAEDC54796.2022.9908188