Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption

التفاصيل البيبلوغرافية
العنوان: Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption
المؤلفون: Velandia, Oscar, Moreno, Mario, Zavala, Ricardo, Morales, Alfredo, Torres, Alfonso, Zuniga, Carlos, Rosales, Pedro, Hernandez, Luis, Carlos, Netzahualcoyotl
المصدر: 2022 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2022 IEEE Latin American. :1-4 Jul, 2022
Relation: 2022 IEEE Latin American Electron Devices Conference (LAEDC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665497671
DOI:10.1109/LAEDC54796.2022.9908191