Formation of high ouality epitaxial layer for an improved GTO

التفاصيل البيبلوغرافية
العنوان: Formation of high ouality epitaxial layer for an improved GTO
المؤلفون: Watanabe, M., Takahashi, Y., Yamada, O., Tagami, S., Kirihata, H.
المصدر: Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on. :98-103 1992
Relation: The 4th International Symposium on Power Semiconductor Devices and Ics
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
DOI:10.1109/ISPSD.1992.991244