Enhanced EBAC Detection on Gate Oxide Breakdown Isolation after High Voltage Electron Beam Irradiation

التفاصيل البيبلوغرافية
العنوان: Enhanced EBAC Detection on Gate Oxide Breakdown Isolation after High Voltage Electron Beam Irradiation
المؤلفون: Ng, P. T., Rivai, F., Quah, A. C. T., Alag, J. C., Tan, P. K., Chen, C. Q.
المصدر: 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2022 IEEE International Symposium on the. :1-6 Jul, 2022
Relation: 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665498159
تدمد:19461550
DOI:10.1109/IPFA55383.2022.9915744