مؤتمر
A 1.8 V 1 Gb NAND flash memory with 0.12 /spl mu/m STI process technology
| العنوان: | A 1.8 V 1 Gb NAND flash memory with 0.12 /spl mu/m STI process technology |
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| المؤلفون: | Lee, J., Heung-Soo Im, Dae-Seok Byeon, Kyeong-Han Lee, Dong-Hyuk Chae, Kyong-Hwa Lee, Young-Ho Lim, Jung-Dal Choi, Young-Il Seo, Jong-Sik Lee, Kang-Deog Suh |
| المصدر: | 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Solid-state circuits conference Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International. 1:104-450 vol.1 2002 |
| Relation: | 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780373359 9780780373358 |
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| DOI: | 10.1109/ISSCC.2002.992960 |