Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory

التفاصيل البيبلوغرافية
العنوان:	Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory
المؤلفون:	Yao, Kexin, Yue, Suge, Zhang, Yanlong, Wang, Liang, Li, Jiancheng, Han, Xupeng, Zha, Qichao
المصدر:	2022 IEEE 6th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC ) Advanced Information Technology, Electronic and Automation Control Conference (IAEAC ), 2022 IEEE 6th. :1437-1441 Oct, 2022
Relation:	2022 IEEE 6th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC )
قاعدة البيانات:	IEEE Xplore Digital Library