Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

التفاصيل البيبلوغرافية
العنوان: Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET
المؤلفون: Xue, Chang, Zhang, Yihan, Chen, Peiyu, Zhu, Mingwei, Wu, Tianqiao, Wu, Meng, He, Yandong, Ye, Le
المصدر: 2022 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2022 IEEE International Symposium on. :595-599 May, 2022
Relation: 2022 IEEE International Symposium on Circuits and Systems (ISCAS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665484855
9781665484848
تدمد:21581525
DOI:10.1109/ISCAS48785.2022.9937703