A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit

التفاصيل البيبلوغرافية
العنوان: A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit
المؤلفون: Efthymiou, Loizos, Arnold, Martin, Longobardi, Giorgia, Udrea, Florin
المصدر: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :396-399 Sep, 2022
Relation: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665484978
DOI:10.1109/ESSDERC55479.2022.9947100