III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

التفاصيل البيبلوغرافية
العنوان: III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
المؤلفون: Vais, A., Yadav, S., Mols, Y., Vermeersch, B., Kodandarama, K. V., Baryshnikova, M., Mannaert, G., Alcotte, R., Boccardi, G., Wambacq, P., Parvais, B., Langer, R., Kunert, B., Collaert, N.
المصدر: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :261-264 Sep, 2022
Relation: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665484978
DOI:10.1109/ESSDERC55479.2022.9947124