A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance

التفاصيل البيبلوغرافية
العنوان: A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance
المؤلفون: Lynch, Justin, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje
المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :127-131 Nov, 2022
Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665489003
تدمد:26878577
DOI:10.1109/WiPDA56483.2022.9955256