Investigation of Parasitic Capacitance Effects in V-GAA Transistor via 3D PEX Methodology

التفاصيل البيبلوغرافية
العنوان: Investigation of Parasitic Capacitance Effects in V-GAA Transistor via 3D PEX Methodology
المؤلفون: Liang, Hong-Gang, Yu, Yong, Xiao, De-Yuan, Zhu, Jing-Fei, Liang, Jing, Ba, Lan-Song, Leng, Ji-Bin, Zhu, Zheng-Yong, Li, Yong-Jie, Su, Xing-Song, Weng, Kobe, Bai, Li, Tang, Yan-Zhe, Sun, Hong-Bo, Wang, Gui-Lei, Li, Hong-Wen, Xu, Wei-Feng, Kang, Bryan, Yoo, Abraham, Cao, Kan-Yu, Zhao, Chao
المصدر: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022
Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665469067
DOI:10.1109/ICSICT55466.2022.9963326