Effect of Oxygen plasma treatment on the performance of GaN-based MIS-HEMTs

التفاصيل البيبلوغرافية
العنوان: Effect of Oxygen plasma treatment on the performance of GaN-based MIS-HEMTs
المؤلفون: Sekiyama, K., Ishiguro, M., Yamazaki, S., Urano, S., Baratov, A., Asubar, J. T., Kuzuhara, M.
المصدر: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Future of Electron Devices, Kansai (IMFEDK), 2022 IEEE International Meeting for. :1-3 Nov, 2022
Relation: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665474535
DOI:10.1109/IMFEDK56875.2022.9975436