دورية أكاديمية
A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)
| العنوان: | A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl) |
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| المؤلفون: | Li, Bingjun, Wang, Sizhen, Nami, Mohsen, Han, Jung |
| المصدر: | In Journal of Crystal Growth 15 March 2020 534 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00220248 |
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| DOI: | 10.1016/j.jcrysgro.2020.125492 |