دورية أكاديمية
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
| العنوان: | Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms |
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| المؤلفون: | Vaněk, Tomáš, Hájek, František, Dominec, Filip, Hubáček, Tomáš, Kuldová, Karla, Pangrác, Jiří, Košutová, Tereza, Kejzlar, Pavel, Bábor, Petr, Lachowski, Artur, Hospodková, Alice |
| المصدر: | In Journal of Crystal Growth 1 July 2021 565 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00220248 |
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| DOI: | 10.1016/j.jcrysgro.2021.126151 |