دورية أكاديمية
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors
| العنوان: | An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors |
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| المؤلفون: | Divay, A., Masmoudi, M., Latry, O., Duperrier, C., Temcamani, F. |
| المصدر: | In Microelectronics Reliability August-September 2015 55(9-10):1703-1707 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00262714 |
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| DOI: | 10.1016/j.microrel.2015.06.074 |