دورية أكاديمية
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
| العنوان: | Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation |
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| المؤلفون: | Sasangka, W.A., Syaranamual, G.J., Gao, Y., I Made, R., Gan, C.L., Thompson, C.V. |
| المصدر: | In Microelectronics Reliability September 2017 76-77:287-291 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00262714 |
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| DOI: | 10.1016/j.microrel.2017.06.057 |