دورية أكاديمية
In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs
| العنوان: | In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs |
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| المؤلفون: | Droopad, Ravi, Rajagopalan, Karthik, Abrokwah, Jonathan, Canonico, Michael, Passlack, Matthias |
| المصدر: | In Solid State Electronics July-August 2006 50(7-8):1175-1177 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00381101 |
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| DOI: | 10.1016/j.sse.2006.05.017 |