دورية أكاديمية
In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs
العنوان: | In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs |
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المؤلفون: | Droopad, Ravi, Rajagopalan, Karthik, Abrokwah, Jonathan, Canonico, Michael, Passlack, Matthias |
المصدر: | In Solid State Electronics July-August 2006 50(7-8):1175-1177 |
قاعدة البيانات: | ScienceDirect |
تدمد: | 00381101 |
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DOI: | 10.1016/j.sse.2006.05.017 |