دورية أكاديمية
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation
| العنوان: | Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation |
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| المؤلفون: | Alexewicz, A., Alomari, M., Maier, D., Behmenburg, H., Giesen, C., Heuken, M., Pogany, D., Kohn, E., Strasser, G. |
| المصدر: | In Solid State Electronics November 2013 89:207-211 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00381101 |
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| DOI: | 10.1016/j.sse.2013.09.001 |