دورية أكاديمية
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures
| العنوان: | Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures |
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| المؤلفون: | Kim, Donghyun, Theodorou, C., Chanuel, A., Gobil, Y., Charles, M., Morvan, E., Woo Lee, Jae, Mouis, M., Ghibaudo, G. |
| المصدر: | In Solid State Electronics November 2022 197 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00381101 |
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| DOI: | 10.1016/j.sse.2022.108448 |