دورية أكاديمية
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
| العنوان: | Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing |
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| المؤلفون: | Chen, Siheng, Cui, Peng, Linewih, Handoko, Cheong, Kuan Yew, Xu, Mingsheng, Luo, Xin, Wang, Liu, Sun, Jiuji, Dai, Jiacheng, Han, Jisheng, Xu, Xiangang |
| المصدر: | In Solid State Electronics March 2024 213 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00381101 |
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| DOI: | 10.1016/j.sse.2024.108861 |