دورية أكاديمية

High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate

التفاصيل البيبلوغرافية
العنوان: High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate
المؤلفون: Heon Shin, Seung, Jeong, Hyeon-Seok, Kim, Yong-Hyun, Jeon, Yong-Soo, Beak, Ji-Min, Park, Wan-Soo, Lee, In-Geun, Yun, Jacob, Kim, Ted, Lee, Jae-Hak, Kwon, Hyuk-Min, Kim, Dae-Hyun
المصدر: In Solid State Electronics July 2024 217
قاعدة البيانات: ScienceDirect
الوصف
تدمد:00381101
DOI:10.1016/j.sse.2024.108933