دورية أكاديمية
Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories
العنوان: | Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories |
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المؤلفون: | Charpin-Nicolle, C., Bonvalot, M., Sommer, R., Persico, A., Cordeau, M.L., Belahcen, S., Eychenne, B., Blaise, Ph., Martinie, S., Bernasconi, S., Jalaguier, E., Nowak, E. |
المصدر: | In Microelectronic Engineering 15 January 2020 221 |
قاعدة البيانات: | ScienceDirect |
تدمد: | 01679317 |
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DOI: | 10.1016/j.mee.2019.111194 |