دورية أكاديمية
Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications
| العنوان: | Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications |
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| المؤلفون: | Kaneriya, R.K., Karmakar, Chiranjit, Rastogi, Gunjan, Patel, M.R., Upadhyay, R.B., Kumar, Punam, Bhattacharya, A.N. |
| المصدر: | In Microelectronic Engineering 1 February 2022 255 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 01679317 |
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| DOI: | 10.1016/j.mee.2022.111724 |