دورية أكاديمية

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

التفاصيل البيبلوغرافية
العنوان: Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
المؤلفون: Härkönen, J. *, Tuovinen, E., Luukka, P., Tuominen, E., Lassila-Perini, K., Mehtälä, P., Nummela, S., Nysten, J., Zibellini, A., Li, Z., Fretwurst, E., Lindstroem, G., Stahl, J., Hönniger, F., Eremin, V., Ivanov, A., Verbitskaya, E., Heikkilä, P., Ovchinnikov, V., Yli-Koski, M., Laitinen, P., Pirojenko, A., Riihimäki, I., Virtanen, A.
المصدر: In Nuclear Inst. and Methods in Physics Research, A 2004 518(1):346-348
قاعدة البيانات: ScienceDirect
الوصف
تدمد:01689002
DOI:10.1016/j.nima.2003.11.018