دورية أكاديمية

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

التفاصيل البيبلوغرافية
العنوان: Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
المؤلفون: Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Makarenko, L., Pintilie, I., Filip, Lucian D., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
المصدر: In Nuclear Inst. and Methods in Physics Research, A November 2023 1056
قاعدة البيانات: ScienceDirect
الوصف
تدمد:01689002
DOI:10.1016/j.nima.2023.168559