دورية أكاديمية
Strain relaxation induced by He-implantation at the Si 1− xGe x/Si(100) interface investigated by positron annihilation
العنوان: | Strain relaxation induced by He-implantation at the Si 1− xGe x/Si(100) interface investigated by positron annihilation |
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المؤلفون: | Liszkay, L, Kajcsos, Zs, Barthe, M.-F, Desgardin, P, Hackbarth, Th, Herzog, H.-J, Holländer, B, Mantl, S |
المصدر: | In Applied Surface Science 2002 194(1):136-139 |
قاعدة البيانات: | ScienceDirect |
تدمد: | 01694332 |
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DOI: | 10.1016/S0169-4332(02)00113-7 |