دورية أكاديمية
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
| العنوان: | Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition |
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| المؤلفون: | Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J. |
| المصدر: | In Applied Surface Science 15 December 2018 461:255-259 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 01694332 |
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| DOI: | 10.1016/j.apsusc.2018.05.191 |