دورية أكاديمية
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
| العنوان: | Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process |
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| المؤلفون: | Mehdi, H., Réveret, F., Bougerol, C., Robert-Goumet, C., Hoggan, P.E., Bideux, L., Gruzza, B., Leymarie, J., Monier, G. |
| المصدر: | In Applied Surface Science 30 November 2019 495 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 01694332 |
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| DOI: | 10.1016/j.apsusc.2019.143586 |