دورية أكاديمية
Trivacancy in silicon: A combined DLTS and ab-initio modeling study
| العنوان: | Trivacancy in silicon: A combined DLTS and ab-initio modeling study |
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| المؤلفون: | Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Coutinho, J., Markevich, A.V., Torres, V.J.B., Briddon, P.R., Dobaczewski, L., Monakhov, E.V., Svensson, B.G. |
| المصدر: | In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4565-4567 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 09214526 |
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| DOI: | 10.1016/j.physb.2009.08.142 |