دورية أكاديمية

Incorporation of ZnIn2S4 semiconductors with S-vacancy engineered MoS2 nanosheets to develop sensitive photoelectrochemical aptasensor for aflatoxin B1 detection

التفاصيل البيبلوغرافية
العنوان: Incorporation of ZnIn2S4 semiconductors with S-vacancy engineered MoS2 nanosheets to develop sensitive photoelectrochemical aptasensor for aflatoxin B1 detection
المؤلفون: Qian, Jing, Liu, Yue, Cui, Haining, You, Fuheng, Yang, Huiyuan, Wang, Kun, Wei, Jie, Long, Lingliang, Wang, Chengquan
المصدر: In Sensors and Actuators: B. Chemical 15 March 2024 403
قاعدة البيانات: ScienceDirect
الوصف
تدمد:09254005
DOI:10.1016/j.snb.2023.135195