دورية أكاديمية
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
| العنوان: | Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments |
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| المؤلفون: | Romanjuk, B. *, Kladko, V., Melnik, V., Popov, V., Yukhymchuk, V., Gudymenko, A., Olikh, Ya., Weidner, G., Krüger, D. |
| المصدر: | In Materials Science in Semiconductor Processing 2005 8(1):171-175 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 13698001 |
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| DOI: | 10.1016/j.mssp.2004.09.030 |