دورية أكاديمية
Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures
| العنوان: | Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures |
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| المؤلفون: | Fujisawa, Taisuke, Onogawa, Atsushi, Horiuchi, Miki, Sano, Yuichi, Sakata, Chihiro, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu, Arimoto, Keisuke |
| المصدر: | In Materials Science in Semiconductor Processing July 2023 161 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 13698001 |
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| DOI: | 10.1016/j.mssp.2023.107476 |