دورية أكاديمية
Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon
العنوان: | Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon |
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المؤلفون: | Tuo, Huan, Liu, Yun, Li, Minghao, Dai, Rongwang, Wang, Hao, Yu, Yuehui, Xue, Zhongying, Wei, Xing |
المصدر: | In Materials Science in Semiconductor Processing 15 August 2023 163 |
قاعدة البيانات: | ScienceDirect |
تدمد: | 13698001 |
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DOI: | 10.1016/j.mssp.2023.107583 |