دورية أكاديمية

Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

التفاصيل البيبلوغرافية
العنوان: Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
المؤلفون: Cao, Yiwei, Lv, Quanjiang, Liu, Ju, Yang, Tianpeng, Mi, Tingting, Wang, Xiaowen, Li, Shuti, Liu, Junlin
المصدر: In Materials Science in Semiconductor Processing February 2024 170
قاعدة البيانات: ScienceDirect
الوصف
تدمد:13698001
DOI:10.1016/j.mssp.2023.107939