دورية أكاديمية

Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

التفاصيل البيبلوغرافية
العنوان: Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results
المؤلفون: Planson, Dominique, Tournier, Dominique, Sonneville, Camille, Bevilacqua, Pascal, Viet Phung, Luong, Morel, Hervé
المصدر: In Materials Science in Semiconductor Processing 1 August 2024 178
قاعدة البيانات: ScienceDirect
الوصف
تدمد:13698001
DOI:10.1016/j.mssp.2024.108444