دورية أكاديمية
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
| العنوان: | Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition |
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| المؤلفون: | Hu, Xiufei, Peng, Yan, Wang, Xiwei, Han, Xiaotong, Li, Bin, Yang, Yiqiu, Xu, Mingsheng, Xu, Xiangang, Han, Jisheng, Wang, Dufu, Cheong, Kuan Yew |
| المصدر: | In Materials Today Communications June 2022 31 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 23524928 |
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| DOI: | 10.1016/j.mtcomm.2022.103563 |