دورية أكاديمية

Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance

التفاصيل البيبلوغرافية
العنوان: Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance
المؤلفون: Zhao, Ming-Jie, Wang, Yao-Tian, Yan, Jia-Hao, Li, Hai-Cheng, Xu, Hua, Wuu, Dong-Sing, Wu, Wan-Yu, Lai, Feng-Min, Lien, Shui-Yang, Zhu, Wen-Zhang
المصدر: In Journal of Science: Advanced Materials and Devices June 2024 9(2)
قاعدة البيانات: ScienceDirect
الوصف
تدمد:24682179
DOI:10.1016/j.jsamd.2024.100722