Correct CMOS IC defect models for quality testing

التفاصيل البيبلوغرافية
العنوان: Correct CMOS IC defect models for quality testing
المؤلفون: Soden, Jerry M, Hawkins, Charles F
المصدر: New Mexico Univ., The Fifth NASA Symposium on VLSI Design.
بيانات النشر: United States: NASA Center for Aerospace Information (CASI), 1993.
سنة النشر: 1993
مصطلحات موضوعية: Quality Assurance And Reliability
الوصف: Leading edge, high reliability, and low escape CMOS IC test practices have now virtually removed the stuck-at fault model and replaced it with more defect-orientated models. Quiescent power supply current testing (I(sub DDQ)) combined with strategic use of high speed test patterns is the recommended approach to zero defect and high reliability testing goals. This paper reviews the reasons for the change in CMOS IC test practices and outlines an improved CMOS IC test methodology.
نوع الوثيقة: Report
اللغة: English
Relation: Twenty-Fourth Lunar and Planetary Science Conference. Part 3: N-Z
URL الوصول: https://ntrs.nasa.gov/citations/19940016620
ملاحظات: DE-AC04-76DP-00789
رقم الأكسشن: edsnas.19940016620
قاعدة البيانات: NASA Technical Reports