تقرير
Combined Total Ionizing Dose and Single-Event Effects on a 22 nm Fully-Depleted Silicon-on-Insulator Test Vehicle
| العنوان: | Combined Total Ionizing Dose and Single-Event Effects on a 22 nm Fully-Depleted Silicon-on-Insulator Test Vehicle |
|---|---|
| المؤلفون: | Megan C Casey, Landen D Ryder, Stefania Esquer, Rachel M Brewer, Scott Stansberry, Jonny Pellish |
| بيانات النشر: | United States: NASA Center for Aerospace Information (CASI), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Electronics And Electrical Engineering |
| الوصف: | Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented. |
| نوع الوثيقة: | Report |
| اللغة: | English |
| URL الوصول: | https://ntrs.nasa.gov/citations/20205010697 |
| ملاحظات: | 724297.40.49.04.01 |
| رقم الأكسشن: | edsnas.20205010697 |
| قاعدة البيانات: | NASA Technical Reports |
| الوصف غير متاح. |