Single Event Effect Testing of the SSDI SFF6661 N-Channel Power MOSFET

التفاصيل البيبلوغرافية
العنوان: Single Event Effect Testing of the SSDI SFF6661 N-Channel Power MOSFET
المؤلفون: Landen D. Ryder, Jason M. Osheroff, Megan C. Casey, Matthew B. Joplin
بيانات النشر: United States: NASA Center for Aerospace Information (CASI), 2023.
سنة النشر: 2023
مصطلحات موضوعية: Electronics and Electrical Engineering
الوصف: This irradiation campaign was performed to evaluate the destructive single event effect (SEE) susceptibility of a n-channel power MOSFET from SSDI for space-based instrumentation. Testing was performed at Michigan State University’s (MSU) Facility for Rate Isotope Beams (FRIB) using an LET of 50.5 MeV·cm2/mg
نوع الوثيقة: Report
اللغة: English
URL الوصول: https://ntrs.nasa.gov/citations/20230017327
ملاحظات: 258548.06.07.01.02.01
رقم الأكسشن: edsnas.20230017327
قاعدة البيانات: NASA Technical Reports